Chipworks
Extranet Login | Site Search | Report Search | Site Map | Careers | Contact Us


Filter:
Device Category: Memory
 
Remove All


  Manufacturer
A - D 2
E - H 15
I - L 4
M - P 21
Q - T 48
U - Z 2
 


  Report Type


  Device Type


  Published Year
1996 18
1997 1
2003 1
2004 18
2005 17
2006 9
2007 12
2008 7
2009 16
2010 10
  18 more


  Published Month


Extracted Schematics
(Recent circuit analysis only)
Analog (General)
I/O
Memory
Search All Reports for in
< Previous  Results 1-25 of 109   Next >
Toshiba THGBM2G6D2FBAIE 32 Gb MLC 32 nm NAND Flash Toshiba THGBM2G6D2FBAIE 32 Gb MLC 32 nm NAND Flash 
Structural Analysis Report (SAR-1009-801)

Description: The THGBM2G6D2FBAIE 32 Gb MLC NAND Flash from Toshiba was built with the latest and smallest NAND... more...

 

Winbond W971GG6JB-25 1G bits DDR2 SDRAM Focused Front End Process Technology Winbond W971GG6JB-25 1G bits DDR2 SDRAM Focused Front End Process... 
Process Review (PPR-1005-802)

Description: The W971GGJB is a 1 Gbit DDR2 SDRAM organized as 8,388,608 words x 8 banks x 16 bits. The device... more...

 

Winbond W971GG6JB-25 1G bits DDR2 SDRAM Memory Sub Array Winbond W971GG6JB-25 1G bits DDR2 SDRAM Memory Sub Array 
Circuit Analysis Report (CAR-1005-809)

Description: The W971GGJB is a 1 Gbit DDR2 SDRAM organized as 8,388,608 words x 8 banks x 16 bits. The device... more...

 

Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM 
Circuit Analysis Report (CAR-1002-806)

Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...

 

Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM - DLL and I/Os Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM - DLL and I/Os 
Circuit Analysis Report (CAR-1002-805)

Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...

 

Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM 
ICWorks Arranger (ICA-1001-802)

Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...

 

Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM 
ICWorks Surveyor (ICS-1001-801)

Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...

 

Samsung K4B1G0846F-HCF8 48 nm 1GB DDR3 SDRAM Process Analysis Samsung K4B1G0846F-HCF8 48 nm 1GB DDR3 SDRAM Process Analysis 
Other (CWR-1001-804)

Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...

 

Cancelled - Elpida E1108AFSE-8E-F 1 GB DDR2 Process Node Assessment Cancelled - Elpida E1108AFSE-8E-F 1 GB DDR2 Process Node Assessment 
Process Node Assessment (PNA-1001-208)

Description: Elpida E1108AFSE-8E-F 1 GB DDR2 SDRAM IC Process Node Assessment more...

 

Samsung K4B1G0846F-HCF8, 1GB DDR3 48 nm SDRAM Samsung K4B1G0846F-HCF8, 1GB DDR3 48 nm SDRAM 
Structural Analysis Report (SAR-1001-802)

Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...

 

Micron Technology MT47H128M8 1Gb DDR2 SDRAM Process Analysis Micron Technology MT47H128M8 1Gb DDR2 SDRAM Process Analysis 
Other (CWR-0912-102)

Description:

The MT47H128M8 is a 1Gb DDR2 SDRAM configured as 16M x 8 x 8. It is packaged in a 60-ball... more...

 

Elpida Memory EDJ1108BASE- 1Gb (128Mb x 8) DDR3 SDRAM Process Analysis Elpida Memory EDJ1108BASE- 1Gb (128Mb x 8) DDR3 SDRAM Process Analysis 
Other (CWR-0912-101)

Description: The EDJ1108BASE is a 1Gb DDR3 SDRAM configured as 128M words x 8 bits. It is packaged in a 78-ball... more...

 

Elpida Memory, Inc. EDJ1108BASE - 1Gbit DDR3 SDRAM Elpida Memory, Inc. EDJ1108BASE - 1Gbit DDR3 SDRAM 
ICWorks Arranger (ICA-1001-101)

Description: This report contains a set of schematics of the entire DDR3 SDRAM.... more...

 

Elpida Memory, Inc. EDJ1108BASE - 1Gbit DDR3 SDRAM Elpida Memory, Inc. EDJ1108BASE - 1Gbit DDR3 SDRAM 
Device Identification Report (DID-0912-201)

Description: This report provides a high level analysis of the EDJ1108BASE... more...

 

Elpida Memory, Inc. EDJ1108BASE - 1Gbit DDR3 SDRAM Elpida Memory, Inc. EDJ1108BASE - 1Gbit DDR3 SDRAM 
Circuit Analysis Report (CAR-0912-201)

Description:  more...

 

Hynix Semiconductor H5TQ1G43BFR - 1Gb DDR3 SDRAM Process Analysis Hynix Semiconductor H5TQ1G43BFR - 1Gb DDR3 SDRAM Process Analysis 
Other (CWR-0910-103)

Description:

The H5TQ1G43BFR is a 1Gb DDR3 SDRAM configured as 256M x 4 bits. It is packaged in a... more...

 

Samsung Electronics K4B2G0846B - 58 nm 2Gb (256M x 8) DDR3 SDRAM Process Analysis Samsung Electronics K4B2G0846B - 58 nm 2Gb (256M x 8) DDR3 SDRAM Process... 
Other (CWR-0910-102)

Description: The K4B2G0846B is a 2Gb DDR3 SDRAM configured as 256M words x 8 bits. It is packaged in a 78-ball... more...

 

Numonyx JSPCM128A00B85ES, 128 Mb PCM Numonyx JSPCM128A00B85ES, 128 Mb PCM 
Circuit Analysis Report (CAR-0910-803)

Description: The Numonyx JSPCM128A00B85ES 128 Mbit Phase Change Memory combines the nonvolatile attributes of... more...

 

Samsung K6R4016V1C-TC10 3120 0.25 µm BiCMOS 4 Mbit SRAM Samsung K6R4016V1C-TC10 3120 0.25 µm BiCMOS 4 Mbit SRAM 
Process Review (PPR-0909-901)

Description: The Samsung K6R4016V1C-TC10 is a 4,194,304 bit high-speed static RAM organized as 262,144 words by... more...

 

Micron 1Gb DDR2 SDRAM MT47H64M16BT-5E Delay Locked Loop (DLL) Micron 1Gb DDR2 SDRAM MT47H64M16BT-5E Delay Locked Loop (DLL) 
Circuit Analysis Report (CAR-0906-102)

Description: This is a circuit analysis of a Delay Locked Loop (DLL) on the MT47H64M16BT-5E 1Gb DDR2 SDRAM... more...

 

Micron 1Gb DDR2 SDRAM MT47H64M16BT-5E Voltage (VPP) Generator Micron 1Gb DDR2 SDRAM MT47H64M16BT-5E Voltage (VPP) Generator 
Circuit Analysis Report (CAR-0906-101)

Description: This is a circuit analysis of a voltage (VPP) generator on the MT47H64M16BT-5E 1Gb DDR2 SDRAM... more...

 

Renesas R5F61648N50FPV 32 Bit MCU 1MB Embedded NOR Flash Renesas R5F61648N50FPV 32 Bit MCU 1MB Embedded NOR Flash 
Exploratory Report (EXR-0906-803)

Description: The R5F61648N50FPV is a 32 bit Microcontroller chip (MCU) chip featuring 1MB of embedded NOR flash... more...

 

Elpida EDJ1108BASE-MNH-E DDR3 SDRAM 70nm Memory Module Elpida EDJ1108BASE-MNH-E DDR3 SDRAM 70nm Memory Module 
Process Node Assessment (PNA-0905-202)

Description: Elpida EDJ1108BASE-MNH-E 1 Gb DDR3 SDRAM. more...

 

Samsung K4B1G0846E 56 nm 1Gb DDR3 SDRAM Samsung K4B1G0846E 56 nm 1Gb DDR3 SDRAM 
ICWorks Surveyor (ICS-0903-803)

Description: This device is a 56 nm DDR3 from Samsumg more...

 

Sandisk Orion 20-82-00162-2 NAND Flash Controller Sandisk Orion 20-82-00162-2 NAND Flash Controller 
Structural Analysis Report (SAR-0903-201)

Description: This report is a structural analysis of the SanDisk 20-82-00162-2 NAND flash... more...

 

< Previous  Results 1-25 of 109   Next >
 
Copyright | Privacy Policy | Careers