Filter: Search by full description contains K4B1G0846F-HCF8   Remove All Design Interest 4   Process Interest 2   Layout and Benchmark 3     Manufacturer Q - T 5     Report Type Circuit Analysis Report 2 ICWorks Arranger 1 ICWorks Surveyor 1 Other 1 Structural Analysis Report 1     Device Type DDR3 SDRAM 4 SDRAM 1     Published Month January 4 February 2   Extracted Schematics (Recent circuit analysis only) Analog (General) Converter ADC DAC Voltage - Current Voltage - Frequency Voltage - Temperature Clock Generator PLL - Clock DLL Pumps Charge pumps Bootstrapping circuit Oscillator VCO Ring Oscillator Crystal LC tank Filter Passive (RC,RL,LC,RLC) Active (Amplifier, Switch cap) SAW Switched-capacitor Reference Generator Current Voltage Bandgap Sensor Temperature RF Transceiver RFID Modulator/Demodulators LNA Mixer Power Amplifier Oscillator Frequency Synthesizer PLL - RF Equalizer Resonator Balun Power Supply Regulator Rectifier Buck Converter Boost Converter Buck/Boost Converter DC-DC Detector Transformer Power management   I/O ESD Buffers Input Output Bi-directional Transceivers SerDes PCI Serial ATA USB LVDS PHY SAS-SATA Fiberchannel PCIExpress JTAG MIPI DDR GDDR   Memory MEMORY Array Architecture Data Path Address Path Refresh Redundancy Control Circuit SRAM DRAM ROM Flash EEPROM Memory Controller EPROM OTP Fuse	Search All Reports Entire Collection Existing Results for in Search by full description Search by company and part # only < Previous  Results 1-6 of 6   Next > Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM  Circuit Analysis Report (CAR-1002-806) Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...   Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM - DLL and I/Os  Circuit Analysis Report (CAR-1002-805) Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...   Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM  ICWorks Arranger (ICA-1001-802) Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...   Samsung K4B1G0846F-HCF8 48 nm 1GB DDR3 SDRAM Process Analysis  Other (CWR-1001-804) Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...   Samsung K4B1G0846F-HCF8, 48 nm, 1GB DDR3 SDRAM  ICWorks Surveyor (ICS-1001-801) Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...   Samsung K4B1G0846F-HCF8, 1GB DDR3 48 nm SDRAM  Structural Analysis Report (SAR-1001-802) Description: The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit... more...   < Previous  Results 1-6 of 6   Next >